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3 simple ways to cite using mla style

The chip of strengthening of the intermediate frequency (IF) K 237XA2 can be made on thin-film technology with application of hinged elements. The design of a chip is carried out by method of a free mask, thus each layer of thin-film structure is put through a special cliche. On a surface of a substrate film resistors, condensers, and also contact platforms and interelement connections are created. The film technology does not provide production of transistors therefore transistors are executed in the form of the hinged elements pasted on a chip substrate. Conclusions of transistors are welded on the corresponding contact platforms.

If form coefficient less than 10, the straight line resistor and if more than ten, the resistor is produced in the form of a meander. The preference is given to the direct resistor. In this case the resistor is produced to straight lines.

We see that the inequality is carried out, therefore these resistors are made of one material. In order that resistors were we will choose material with as little as possible as it is possible big specific superficial resistance (). Let's stop the choice on the material "MLT-3M". This material possesses the following characteristics:

We see that the inequality is carried out, therefore these resistors are made of one material. In order that resistors were we will choose material with as little as possible as it is possible big specific superficial resistance (). Let's stop the choice on the material "KEPMET". This material possesses the following characteristics:

The purpose of this academic year project is development of an integrated chip according to the requirements provided in the specification. The chip is carried out by method of free masks on thin-film technology.

On it calculation of resistors of the first group is complete. All resistors turned out direct and not arranged. Thanks to it the sizes of resistors are minimum that will allow to have them on a substrate compactly and with the greatest extent of integration.

In this academic year project it is required to develop a set of design documentation of an integrated chip K 237 HA On a functional purpose the developed chip the amplifier of intermediate frequency represents. The chip has to be made on thin-film technology by method of free masks (MCM) in the form of a hybrid integrated chip (GIMS).

Having removed a mask unnecessary more, apply a continuous protective film on a surface (for example, SiO and for the third time create a photoresistive mask, opening sheeting sites over contact platforms. Having pickled a sheeting in these parts and having removed a photoresistive mask, receive GIMS payment with film elements and open contact areas.

We see that the inequality is not carried out, means all these resistors it is impossible to make of one material. That all of us could make resistors, it is necessary to break them into two groups and for each group to choose the material.

The main objective of electric calculation is determination of the capacities disseminated by resistors and working tension on facings of condensers. As a result of calculation real values of capacities and tension which are basic data for calculation of the geometrical sizes of elements were received.

On it calculation of resistors of the second group is complete. All resistors turned out direct and not arranged. Thereof the sizes of resistors are minimum that will allow to have them on a substrate compactly and with the greatest extent of integration.